INIS
anisotropy
55%
annealing
23%
barriers
11%
buffers
29%
capacitance
8%
cobalt
7%
crystal defects
7%
electron beams
26%
epitaxy
48%
equivalent circuits
9%
evaporation
15%
fcc lattices
25%
films
75%
growth
7%
hcp lattices
12%
hysteresis
19%
impedance
34%
junctions
28%
kerr effect
14%
layers
100%
magnesium oxides
42%
magnetic fields
8%
magnetic properties
18%
magnetic tunnel junctions
7%
magnetization
40%
magnetoresistance
32%
metals
14%
mhz range
17%
molybdenum 100
7%
nanostructures
12%
nickel oxides
10%
orientation
8%
osmium
12%
peaks
7%
permalloy
44%
randomness
10%
shape
15%
spin
45%
stability
9%
substrates
13%
surfaces
14%
symmetry
8%
temperature range 0273-0400 k
26%
thickness
32%
topography
7%
transistors
38%
tunneling
10%
valves
31%
voltage
8%
x-ray diffraction
7%
Physics
Anisotropic Magnetoresistance
6%
Anisotropy
31%
Annealing
7%
Behavior
12%
Cobalt
8%
Coercivity
15%
Diffraction
9%
Domain Wall
6%
Eddy
6%
Electrical Resistivity
7%
Electron Scattering
6%
Evaporation
28%
Exchange Bias
12%
Exponents
6%
Ferromagnetic Resonance
12%
Frequencies
9%
High Resolution
9%
Hysteresis
11%
Impedance
13%
Ion
6%
Kerr Effect
15%
Magnetic Anisotropy
8%
Magnetic Properties
17%
Magnetization
27%
Meander
6%
Memory
7%
Molecular Beam Epitaxy
7%
Networks
6%
Nickel
6%
Numerical Analysis
6%
Oxide
9%
Oxygen
6%
Photoelectric Emission
6%
Plane
14%
Ratios
26%
Room Temperature
36%
Roughness
6%
Silicon
12%
Spectrometer
13%
Spin
21%
Spin Valve
21%
Statics
6%
Substrates
9%
Surface Properties
10%
Surface Roughness
6%
Temperature
11%
Transistor
19%
Transport Properties
6%
Wafer
7%
X Ray Spectroscopy
6%
Material Science
Anisotropy
53%
Buffer Layer
11%
Capacitance
10%
Characterization
8%
Cobalt
6%
Devices
8%
Domain Wall
12%
Durability
9%
Electrical Resistivity
6%
Electrodeposition
6%
Electronic Circuit
11%
Epitaxial Layer
12%
Film
21%
Film Thickness
5%
Giant Magnetoresistance
18%
Glass
9%
Lattice Mismatch
6%
Lithography
6%
Magnesium Oxide
43%
Magnetoresistance
17%
Magnetron Sputtering
7%
Material
6%
Metal
7%
Molecular Beam Epitaxy
9%
Nickel
12%
Osmium
6%
Oxide
19%
Oxide Film
6%
Permalloy
25%
Saturation
7%
Secondary Ion Mass Spectrometry
6%
Silicon
12%
Sputtered Film
6%
Surface Topography
6%
Temperature
52%
Thermal Stability
9%
Transistor
38%
ZnO
6%